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As chips become faster, they suffer from power instability and signal noise. While glass substrates offer superior electrical properties, they are mechanically fragile and prone to cracking. Furthermore, traditional capacitors are too bulky to be placed near the chip core, leading to significant high-frequency noise and heat dissipation challenges in advanced semiconductor packages.

The solution integrates ultra-thin silicon capacitors directly into the glass substrate structure via advanced through-holes and interconnects. By placing high-density capacitance as close as possible to the chip, it provides instantaneous voltage compensation and minimizes parasitic inductance. This integration also reinforces the mechanical robustness of the fragile glass substrate while leveraging its low dielectric loss for better thermal performance and signal integrity. 

It solves the dual flaws of "mechanical fragility" and "high-frequency decoupling difficulty" in glass substrates. Prior art struggled to integrate high-capacity decoupling without increasing package thickness. This invention overcomes these reliability bottlenecks by co-designing UTHDSCs with the RDL, addressing the power noise issues common in 5G and AI chips while making glass-based packaging commercially viable.